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SUSS MicroTec

MA1006

LithographySUSS MicroTec MA1006 family
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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The SUSS MicroTec MA1006 is a manual mask aligner for top and bottom side alignment. The MA1006 offers exposure programmes for proximity, soft, hard and vacuum contact, and is suitable for wafers up to 150mm diameter. The Karl Suss MA1006 achieves 1 micron resolution on 6-inch wafers.[1][2]

SUSS MicroTec logo
Fig. — Manufacturer logo, not a photo of this toolWikimedia Commons (see file page for license)

Vacuum

Proximity, soft, hard, vacuum contact[1]

Performance

1μm steps[1]

Optics

maximum 7" x 7"[1]

How it works

The MA1006 supports several exposure modes including proximity, soft contact, hard contact, vacuum contact, and bond mode. In proximity mode, the wafer and mask are separated by a gap adjustable in 1 μm steps. In soft contact, a low contact pressure is applied during exposure. In hard contact, nitrogen pressure beneath the wafer presses it against the mask. In vacuum contact, the space between wafer and mask is evacuated to achieve intimate contact. The exposure lamp can be 350 W, 500 W, or 1000 W, providing UV light in the UV400 or UV300 spectral ranges. The illumination uniformity over a 6-inch wafer is typically ±5%.[1]

What do the numbers mean?

Vacuum & pumping4

Exposure modes
Proximity, soft, hard, vacuum contact[1]
Accurate?
Soft contact pressure
2-8 N[1]
Accurate?
Hard contact pressure
Nitrogen pressure 0-2 bar[1]
Accurate?
Vacuum contact level
< -0.8 bar[1]
Accurate?

Wafer handling3

Resolution
1 micron on 6-inch wafers[2]
Accurate?
Wafer size
up to 150mm diameter[1]
Accurate?
Exposure uniformity
±5% typical for 150mm wafer[1]
Accurate?

Gas & chemistry1

Measured linewidth
2 µm at full photoresist height (Shipley 1813 process)[4]
Accurate?

Optics & imaging2

Mask size
maximum 7" x 7"[1]
Accurate?
Exposure optics
UV400: 350-450nm; UV300: 280-350nm; Hg-lamp 350W or 1000W[1]
Accurate?

Performance1

Alignment step
1μm steps[1]
Accurate?

Dimensions & facilities3

Tool category on source page
Step Height PROFILOMETER[3]
Accurate?
Dimensions (W×H×D)
ca. 920mm × 1600mm × 870mm[1]
Accurate?
Weight
ca. 450 kg[1]
Accurate?

Configuration & options3

OEM
SUSS MicroTec[3]
Accurate?
Model
MA1006[3]
Accurate?
Power requirement
350W lamp: 1200 VA; 1000W lamp: 2000 VA[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
MA1006 TSA——Top Side Alignment variantnanofab.utah.edu[5]
MA1006 TSAIBSA——Top and Bottom Side Alignment variantnanofab.utah.edu[5]
MA1006 TSAII R——Variant designation as stated in manualnanofab.utah.edu[5]
MA1006 TSA / BSA——Top and bottom side alignment configurationnanofab.utah.edu[1]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Measured linewidth2 µm at full photoresist height (Shipley 1813 process)[4]
  • Exposure modesProximity, soft, hard, vacuum contact[1]
  • Soft contact pressure2-8 N[1]
  • Hard contact pressureNitrogen pressure 0-2 bar[1]
  • Vacuum contact level< -0.8 bar[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What is the maximum wafer diameter the MA1006 can handle?

The MA1006 can process wafers up to 150 mm in diameter.[1]

What exposure modes does the MA1006 support?

The MA1006 supports proximity, soft contact, hard contact, vacuum contact, and bond mode.[5][1]

What lamp power options are available for the MA1006?

The MA1006 can be equipped with 350 W, 500 W, or 1000 W exposure lamps.[1]

How is alignment carried out on the MA1006?

Alignment is performed using micrometer screws for X, Y, and theta directions. For top-side alignment, a splitfield microscope is used; for bottom-side alignment, a CCD camera and digital image storage system are employed.[5]

What is the typical illumination uniformity of the MA1006 over a 6-inch wafer?

The illumination uniformity over a 6-inch wafer is typically ±5%.[1]

What minimum linewidth has been measured on the MA1006?

With Shipley 1813 photoresist under a defined process (2000 rpm spin, 110 °C bake, 30 mJ/cm² exposure, AZ 1:1 develop), the measured minimum linewidth at full photoresist height is 2 μm.[4]

Not publicly documented

The following facts about the MA1006 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the MA1006 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the MA1006 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the MA1006 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the MA1006 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the MA1006 are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (5)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  2. [2]jmind.com — jmind.comjmind.com
  3. [3]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  4. [4]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  5. [5]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
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Last updated Oct 11, 2026.

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