Waferpedia

Comparison ledger

MA1006versus1000 Family

SUSS MicroTec MA1006, Ultratech 1000 Family, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
MA1006SUSS MicroTec
1000 FamilyUltratech
OEMSUSS MicroTecUltratech
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilySUSS MicroTec MA1006Ultratech 1000 Family
Cited variants
  • MA1006 TSA[1]
  • MA1006 TSAIBSA[1]
  • MA1006 TSAII R[1]
  • MA1006 TSA / BSA[2]
—
Specifications
OEMSUSS MicroTec[3]—
ModelMA1006[3]—
Tool category on source pageStep Height PROFILOMETER[3]—
Resolution1 micron on 6-inch wafers[4]—
Measured linewidth2 µm at full photoresist height (Shipley 1813 process)[5]—
Wafer sizeup to 150mm diameter[2]—
Mask sizemaximum 7" x 7"[2]—
Exposure modesProximity, soft, hard, vacuum contact[2]—
Exposure opticsUV400: 350-450nm; UV300: 280-350nm; Hg-lamp 350W or 1000W[2]—
Exposure uniformity±5% typical for 150mm wafer[2]—
Alignment step1μm steps[2]—
Soft contact pressure2-8 N[2]—
Hard contact pressureNitrogen pressure 0-2 bar[2]—
Vacuum contact level< -0.8 bar[2]—
Dimensions (W×H×D)ca. 920mm × 1600mm × 870mm[2]—
Weightca. 450 kg[2]—
Power requirement350W lamp: 1200 VA; 1000W lamp: 2000 VA[2]—
Tool type—Photolithography step-and-repeat 1X stepper[6]
Optical design—Wynne Dyson[6]
Magnification—1X[6]

Plan your fab

Building a Lithography process? Get a complete equipment list.

Open the fab equipment planner →
Sources (6)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]nanofab.utah.edunanofab.utah.edu
  4. [4]jmind.comjmind.com
  5. [5]nanofab.utah.edunanofab.utah.edu
  6. [6]en.wikipedia.orgen.wikipedia.org