Hitachi
SU8230
What it is
How it works
Where it fits in the process flow
The instrument is used with prepared, dried specimens that are mounted on a holder and loaded into the specimen chamber for imaging and analysis.[3]
Applications
The Hitachi SU8230 is used for high-resolution imaging of conductive and charge-prone samples.[3][2]
The Hitachi SU8230 is used for elemental mapping, compositional contrast imaging, semiconductor thin films, polymers, hydrogels, biological samples, bacteria, and immunogold-labeled cells.[3][2]
- Scanning electron microscopy
What do the numbers mean?
Power & electrical3
Vacuum & pumping4
Optics & imaging3
Configuration & options9
- Training prerequisite note
- Qualification on the SEM-10 Hitachi SU8230 is a prerequisite to SP-4 training and access.[1]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Resolution at 1.0 kV1.1 nm at 1.0 kV landing voltage and 1.5 mm working distance[2]
- Landing voltage range30 kV to 0.01 kV[2]
- Beam deceleration mode landing voltage range0.01 kV to 2 kV[2]
- Cryo trapIntegrated LN2 cryo trap[2]
- Non-cryo stage travelX/Y 0-110 mm; Z 1.5-40 mm; Tilt -5 to +70; Rotation 360[2]
- Cryo stage travelX/Y approximately +/- 9 mm; Z 1.5-40 mm; Tilt 30 at Z=8 mm or greater, 15 at 5 mm, 0 at 1.5 mm; Rotation 0[2]
- Vacuum systemSpecimen chamber turbo + scroll dry pump; gun/column ion pumps x3 plus non-evaporative getter[2]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What type of detector and source does the Hitachi SU8230 use?
The Hitachi SU8230 uses a cold field emission source. The instrument supports in-column upper ExB detection, an in-column top detector, a chamber-mounted Everhart-Thornley detector, and a retractable below-lens semiconductor type backscattered electron detector.[2]
Not publicly documented
The following facts about the SU8230 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the SU8230 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the SU8230 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the SU8230 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the SU8230 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the SU8230 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]cns1.rc.fas.harvard.edu — cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
- [2]cse.umn.edu — cse.umn.educse.umn.edu
- [3]ywcmatsci.yale.edu — ywcmatsci.yale.eduywcmatsci.yale.edu
- [4]https://cns1.rc.fas.harvard.edu/documents/2018/06/cns-consolidated-rate-sheet.pdf — cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
Last updated Oct 11, 2026.
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