Comparison ledger
Nikon 1505 G 6 E, SUSS MicroTec MA 6 BA 6 IR Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | MA 6 BA 6 IR MaskSUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1988– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon 1505 | SUSS MicroTec MA 6 BA 6 IR Mask |
| Specifications | ||
| Configuration | 5" reticle[1] | — |
| Resolution | 650 nm[2] | — |
| Numerical Aperture | 0.54[2] | — |
| Reduction | 5x[2] | — |
| Exposure Field | 15 x 15 mm[2] | — |
| Alignment Accuracy | 130 nm[2] | — |
| Wafer Size | 4 inch[1] | — |
| Light Source | g-line[3] | — |
| Introduction Year | 1988[2] | — |
| NA (Numerical Aperture) | 0.54[2] | — |
| Make | Nikon[1] | — |
| Model | 1505 G 6 E[1] | — |
| Category | Stepper[1] | — |
| Wafer Sizes | 4 inch[1] | — |
| Exposure type | g-line[2] | — |
| NA | 0.54[2] | — |
| Exposure field | 9.3 x 18.8 mm[2] | — |
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