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Applied Materials

Centura Ultima TE HDP

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The Applied Materials Centura Ultima TE HDP is a high-density plasma chemical vapor deposition (HDP CVD) system. The Applied Materials Centura Ultima TE HDP supports 8-inch wafers. The Applied Materials Centura Ultima TE HDP is configured with one Ultima TE chamber, two DxZ nitride chambers, one wafer orienter chamber, and one multi-slot cooldown chamber.[1]

Centura Ultima TE HDP — Inventory photo
Fig. 01Centura Ultima TE HDPInventory photo[1]

Wafer size

(1) Wafer Orienter Chamber

Power

208 Vac[1]

Gas delivery

HDP CVD (Chemical Vapor Deposition)[1]

What it is

The Applied Materials Centura Ultima TE HDP CVD is configured for 200 mm (8 inch) wafers.[1]

Where it fits in the process flow

General reference — not yet source-verified

HDP CVD is typically used for interlayer dielectric (ILD) deposition and for shallow trench isolation (STI) fill. The low deposition temperature and excellent gap-fill make it suitable for sub-micron node applications. The Centura platform allows clustering with other chambers for pre-clean or post-deposition steps.

Applications

General reference — not yet source-verified

The primary application of the Ultima TE HDP system is the deposition of silicon dioxide films for dielectric isolation. The system can also be configured to deposit other dielectrics such as silicon nitride by using appropriate precursors and chamber configurations.

What do the numbers mean?

Power & electrical4

Voltage
208 Vac[1]
Accurate?
Phase
3 Phase[1]
Accurate?
Frequency
60 Hz[1]
Accurate?
Electrical requirements
208 Vac, 3 Phase, 4 Wires, 60 Hz[1]
Accurate?

Wafer handling3

Wafer size
(1) Wafer Orienter Chamber[1]
Accurate?
Wafer size
8 inch[1]
Accurate?
Chamber configuration
1 Ultima TE Chamber, 2 DxZ Nitride Chambers, 1 Wafer Orienter Chamber, 1 Multi-Slot Cooldown Chamber[1]
Accurate?

Gas & chemistry1

Process
HDP CVD (Chemical Vapor Deposition)[1]
Accurate?

Configuration & options3

Manufacturer
Applied Materials[1]
Accurate?
Model
Centura Ultima TE HDP[1]
Accurate?
Vintage
2004[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Voltage208 Vac[1]
  • Phase3 Phase[1]
  • Frequency60 Hz[1]
  • ProcessHDP CVD (Chemical Vapor Deposition)[1]
  • Electrical requirements208 Vac, 3 Phase, 4 Wires, 60 Hz[1]

Where are the manuals?

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Not publicly documented

Field notes

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Not publicly documented

The following facts about the Centura Ultima TE HDP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Centura Ultima TE HDP are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Centura Ultima TE HDP are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Centura Ultima TE HDP are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Centura Ultima TE HDP are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Centura Ultima TE HDP is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]Inventory photo
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Last updated Sep 25, 2026.

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