Aixtron
The Aixtron AIX 2600 G 3 is a MOCVD reactor for 2, 3, and 4 inch wafers. The reactor supports 8 wafers per run and can be configured for GaAs or InP substrates with either 7 hydrides and 8 metal-organics or 9 hydrides and 9 metal-organics.[1][2][3]

The Aixtron AIX 2600 G 3 is a metal organic chemical vapor deposition reactor used for deposition.[1][3]
A metal organic chemical vapor deposition reactor forms thin films by delivering gaseous precursor compounds into a heated reaction zone where they decompose and react at the wafer surface.
A metal organic chemical vapor deposition reactor belongs in the thin-film deposition portion of semiconductor fabrication.
Metal organic chemical vapor deposition reactors are used to grow compound semiconductor and epitaxial films for electronic and optoelectronic device structures.
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The following facts about the AIX 2600 G 3 MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AIX 2600 G 3 MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the AIX 2600 G 3 MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the AIX 2600 G 3 MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the AIX 2600 G 3 MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the AIX 2600 G 3 MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 6, 2026.
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