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The Tegal 903ACS is a narrow gap diode reactor system for semiconductor etching of silicon, Ga-As, In-P, and Si-Ge substrates.
The Tegal 903ACS is a narrow gap diode reactor system for semiconductor etching of silicon, Ga-As, In-P, and Si-Ge substrates.
Cited variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Tegal 901ACS | — | — | Wide-gap diode reactor system suited for low-temperature plasma etch operations and delicate materials; no clamps or electrostatic mechanisms for wafer manipulation. | plasmatherm.com[1] |