Plasma-Therm Versaline ICP

Models in this family

1. 

   Versaline ICP

   The Plasma-Therm Versaline ICP Etcher is an inductively coupled plasma etcher.

   Cited variants

   Designation	Generation	Vintage	Changes	Source
   VERSALINE RIE	—	—	Reactive ion etch configuration; supports up to 200mm wafers; substrate bias 13.56MHz and optional 40MHz; no ICP source.	web.archive.org[1]
   VERSALINE DSE	—	—	Deep silicon etch (DRIE) configuration; fast gas switching, notchless SOI etching, ARDE reduction, patented endpoint algorithms.	web.archive.org[1]
   VERSALINE PECVD	—	—	Plasma enhanced chemical vapor deposition; silane-based and TEOS films; high-temperature electrode up to 500C; 100mm to 200mm substrates.	web.archive.org[1]
   VERSALINE HDPCVD	—	—	High-density plasma CVD; low temperature (<180C) deposition; trench/gap fill; ICP source for dense films.	web.archive.org[1]
   VERSALINE IBE	—	—	Ion beam etch; large-area ion sources; tilt angles; Marathon grids; <2% 3-sigma uniformity on 200mm.	web.archive.org[1]
   VERSALINE IBD	—	—	Ion beam deposition; 6 or 8 target configurations; tilt angles; Marathon grids; <2% 3-sigma uniformity.	web.archive.org[1]

2. 

   Versaline ICP Deep Silicon

   The Plasma-Therm Versaline ICP Deep Silicon Etcher is an inductively coupled plasma etcher with stated 208/220 VAC, 3 phase, 30 A, 4-wire, 50/60 Hz requirements.

Sources