Comparison ledger
Tegal 1511e, Tegal 901G, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1511eTegal | 901GTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | three- to six-inch wafers | 75 mm to 150 mm round substrates; square and rectangular substrates |
| Process node | — | — |
| Introduced | 1984 | 1999 |
| Production run | 1984– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 1511e | Tegal 901G |
| Specifications | ||
| tool type | tri-electrode dual-frequency plasma etch system[1] | — |
| wafer size | three- to six-inch wafers[1] | — |
| first sold | 1984[1] | — |
| system characteristic | first vacuum-loadlocked dual-frequency tri-electrode etch system[1] | — |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | Yes[1] | — |
| Tool type | — | diode plasma etcher[2] |
| Configuration | — | special configuration for GaAs processing[2] |
| Configured features | — | special sensors and electrode designs[3] |
| Intended applications on platform | — | pad, zero layer, non-selective nitride, backside, planarization, oxide, nitride, poly, and III-V materials applications such as GaAs[3] |
| Substrate sizes on platform | — | 75 mm to 150 mm round substrates as well as square and rectangular substrates[3] |
| Equipment Type | — | Diode plasma etcher[2] |
| Process | — | Plasma etching[2] |
| Substrate Size | — | 75 mm to 150 mm round substrates; square and rectangular substrates[3] |
| Series | — | 900 series[2] |
| Installed Base (900 Series) | — | More than 1,300 systems worldwide[2] |
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