Waferpedia

Comparison ledger

100 ICP FluorineversusApollo

Oxford Instruments 100 ICP Fluorine, Trion Apollo, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
ApolloTrion
OEMOxford InstrumentsTrion
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineTrion Apollo
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]100mm to 300mm[2]
Etch rate (photoresist strip)—up to 6 µm/min[2]
Plasma source options—Inductively Coupled Plasma (ICP) or SST-Lightning microwave[3]
RF bias—Yes (RIE biased electrode)[4]
Tuning—Self-tuning / automatic tuning[2]
Chuck type—Electrostatic chuck with helium backside cooling[4]
Wafer handling robot—Multi-axis atmospheric robot; transports 150mm, 200mm, and 300mm wafers[4]
Process controller—PC-based with graphical software; recipes stored on 3.5" disks[4]
Physical dimensions (W x D x H)—18" x 50" x 51"[4]
Maximum wafer size (stated in source)—up to 8" (200mm) — note: source also states robot handles 300mm wafers[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]triontech.comtriontech.com
  3. [3]triontech.comtriontech.com
  4. [4]semiconductoronline.comsemiconductoronline.com