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Comparison ledger

100 ICP FluorineversusAlcatel Adixen AMS 200 DRIE

Oxford Instruments 100 ICP Fluorine, Pfeiffer Alcatel Adixen AMS 200 DRIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsPfeiffer
CategoryEtchEtch
Wafer size—Single-Wafer Chamber for Deep Silicon Etch
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorinePfeiffer Alcatel Adixen AMS 200 DRIE
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]Single-Wafer Chamber for Deep Silicon Etch[2]
Power—400 V, 50/60 Hz, 3-Phase[2]
Electrical Feed—480 VAC to Tool[2]
Tool Supply—208 V, 500 A, 3-Phase, 4-Wire[2]
Process Gases—Ar, O2, N2, C4F8, SF6 & He[2]
RF Power—5 kW[2]
Platen Power—3 kW[2]
Cooling—Standalone Chiller[2]
Cryogenic Cooling—No[2]
Turbo Pump—Removed / Not Included[2]
Roughing Pump—Removed / Not Included[2]
Trap—Removed[2]
Foreline—Removed[2]
Wafer Size—8 inch[2]
Auto Load/Unload—Yes[2]
Robot—1 Robot from cassette to chamber[2]
Chamber Type—Single-Wafer Chamber[2]
Process Type—Deep Silicon Etch (DRIE)[2]
Vacuum & Air Utilities—Yes[2]
Additional Spares—Yes[2]
Spare Trap—Available[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing