Waferpedia

Comparison ledger

1 DP 41versus6 EC

Logitech 1 DP 41, Strasbaugh 6 EC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1 DP 41Logitech
6 ECStrasbaugh
OEMLogitechStrasbaugh
CategoryCMPCMP
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLogitech 1 DP 41Strasbaugh 6 EC
Specifications
Phase3 Phase[1]3 Phase[2]
Configuration50/60 Hz[1]50/60 Hz[2]
Voltage480 V[1]208 V[2]
MakeLogitech[1]—
Model1 DP 41[1]—
Frequency50/60 Hz[1]50/60 Hz[2]
Current12 amps[1]—
Full Load—30 A[2]
Wafer size (inch)—3, 4[3]
Wafer size (mm)—100[4]
Input voltage—208 V[2]
Full load current—30 A[2]
Motor amps—13.6 A[2]
Conditioning arm sweep zones—10[5]
Pad conditioning zones—20[6]
Control interface—Color touch-screen GUI[6]
Carrier type—ViPRR[6]
Load station—Hydro-Lift[6]
Table and spindle motor control—Closed-loop RPM[6]
Pad conditioning type—In-situ and ex-situ[6]
Typical applications—Si and SiO2 polishing and planarizing[4]
Asset / model—Strasbaugh 6 EC[2]
Power—50/60 Hz, 3 phase, 208 V[2]
Motor current—13.6 motor amps[2]
Wafer size—100 mm[4]
Substrate chucks—3-inch and 4-inch wafers[3]
Functions—Si and SiO2 polishing and planarizing[4]
Programmable controls—fully programmable sweep, downpressure, table speed, time, slurry flow[3]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  4. [4]nanofab.utah.edunanofab.utah.edu
  5. [5]cnfusers.cornell.educnfusers.cornell.edu
  6. [6]web.archive.orgweb.archive.org