Waferpedia

Comparison ledger

TCP 9600 SE MetalversusMarch AP 1000

Lam Research TCP 9600 SE Metal, Nordson March AP 1000, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Etch, null[1]
Side-by-side comparison of selected equipment models
Attribute
TCP 9600 SE MetalLam Research
OEMLam ResearchNordson
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research TCP 9600Nordson March
Specifications
Install TypeThrough-the-wall[2]—
Software TypeLam Envision[2]—
Software VersionE 1.5.2[2]—
ConfigurationSECS Interface[2]Includes vacuum pump & RF generator[5]
Electrical Requirements208V/80A[2]—
PM 1 / Main ChamberMetal Etch[2]—
Helium Cooling MFC TypeUNIT UPC8130[2]—
Main On-Board AC Distribution TypeFused[2]—
DSQ TypeHinged[2]—
Endpoint TypeMonochromators[2]—
Voltage208 V[3]—
Wafer Sizes6 inch, 8 inch[4]—
SECS InterfaceYes[2]—
Mainframe TypeStand Alone Etcher Mainframe[2]—
Process ModulePM 1 / Main Chamber: Metal Etch[2]—
Gas BoxOrbitally Welded Gas Box[2]—
Backside Helium CoolingYes[2]—
Heated Pumping ManifoldsYes[2]—
On-Board RF GeneratorsYes[2]—
WVDSYes[2]—
IndexersHine 38A Indexers[2]—
Endpoint Detection SystemYes[2]—
Endpoint Lam PN830-330546-001[2]—
Chamber LinerYes[2]—
Chamber Anodization ConditionGood[2]—
Electrode Fixed GapYes[2]—
Wafer Clamp TypeESC (Electrostatic Chuck)[2]—
ESC TypePolyamid[2]—
Gate Valve TypePendulum[2]—
TCP Coil Size6"[2]—
Chiller Make/ModelEdwards TCU40/80[2]—
Chiller Electrical Requirements200/208VAC / 25A[2]—
Chiller Number of Cooling ChannelsOne[2]—
Wafer ClampESC[2]—
Gate ValvePendulum[2]—
# of Cooling ChannelsOne[2]—
Gas PanelStandard[2]—
Chamber ProcessMetal Etch (PM 1 / Main Chamber)[2]—
RF GeneratorsOn-Board[2]—
Main AC Distribution TypeFused[2]—
Electrode TypeFixed Gap[2]—
Chiller ModelEdwards TCU40/80[2]—
Number of Cooling ChannelsOne[2]—
Additional Electrical (208 V variant)208 V[3]—
OEMLam Research[2]—
ModelTCP 9600 SE[2]—
CategoryEtch[2]—
Main chamberMetal Etch[2]—
ChillerEdwards TCU40/80[2]—
Gas panelStandard Gas Panel[2]—
Frequency—50 Hz[1]
CB Current—25 A[1]
SCCR—10 kA[1]
RF Generator Power (optional)—600 W or 1000 W (Seren, 13.6 MHz)[6]
Vacuum Pump—Included (dry or wet pump options)[7]
Power—50 Hz[5]
Vacuum—Included (dry or wet pump options)[5]
RF Generator Power—600 W or 1000 W (Seren, 13.6 MHz)[5]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (7)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]Equipment inventory listing
  5. [5]waferpedia.comwaferpedia.com
  6. [6]nc-p-001.sitecorecontenthub.cloudnc-p-001.sitecorecontenthub.cloud
  7. [7]Equipment inventory listing