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Comparison ledger

TCP 9600 Metalversus1512e

Lam Research TCP 9600 Metal, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
TCP 9600 MetalLam Research
1512eTegal
OEMLam ResearchTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research TCP 9600Tegal 1512e
Specifications
ConfigurationSMIF[1]—
Supported wafer sizes150mm (6 inch) and 200mm[2]—
Process pressure range0 - 100 mTorr[3]—
Top electrode power0 - 1250 W[3]—
Lower electrode power0 - 1200 W[3]—
Process temperature55 °C[3]—
Process gasesCl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, He[3]—
Endpoint detectionAdjustable monochromator[3]—
Wafer clampElectrostatic chuck (ESC) with helium backside cooling[4]—
Electrode gapFixed gap 8 inch TCP coil[4]—
Number of RF generators3 (AE RFG 1250)[4]—
Power supply requirements208V, 80A, 3-Phase, 50/60Hz[4]—
DSQ strip moduleIncluded[3]—
Software versionEnvision 1.6.1-012[4]—
Aluminum etch rate> 8000 Å/min[2]—
Aluminum non-uniformity+/- 15%[2]—
System uptimeTypically > 85%[2]—
Mean time to change (MTTC)12 hours[2]—
Mean time between failures (MTBF)> 125 hours[2]—
Mean time to repair (MTTR)< 4 hours[2]—
Tool type—Industrial RIE plasma etcher system[6]
Stated configuration—With modules assembly for CI-4222[6]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semigroup.comsemigroup.com
  3. [3]semistarcorp.comsemistarcorp.com
  4. [4]solutions-on-silicon.comsolutions-on-silicon.com
  5. [5]waferpedia.comwaferpedia.com
  6. [6]semistarcorp.comsemistarcorp.com