Waferpedia

Comparison ledger

EV 501 Waferversus10100

EV Group EV 501 Wafer, West Bond 10100, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV 501 WaferEV Group
10100West Bond
OEMEV GroupWest Bond
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeCapable of thermo compression, fusion or anodic wafer bonding—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group EV 501 WaferWest Bond 10100
Cited variants
  • EV 501 Wafer Bonder[1]
—
Specifications
ConfigurationRefurbished[2]—
Wafer sizeCapable of thermo compression, fusion or anodic wafer bonding[2]—
ThicknessMax wafer stack thickness 6 mm[2]—
Bottom side heater550°C max. in 1°C steps[2]—
Temperature uniformity± 1,5 %[2]—
Bonding capabilityCapable of thermo compression, fusion or anodic wafer bonding[2]—
Bond chamberBond chamber for small pieces up to 150 mm wafers (with correct tooling)[2]—
Vacuum pumpTurbo Pump[2]—
Power supplyHigh voltage power supply for anodic bonding (additional tooling may be required)[2]—
ElectronicsElectronics Rack[2]—
Control/softwareComputer & Software[2]—
DisplayLCD Monitor[2]—
PumpRoughing Pump[2]—
ManualOperations Manual[2]—
ConditionRefurbished[2]—
Wafer sizes supported2, 3, 4, 5, 6, 12 inch[2]—
Max wafer stack thickness6 mm[2]—
Bottom side heater max temperature550°C max.[2]—
Heater temperature step1°C steps[2]—
Roughing pumpRoughing Pump[2]—
High voltage power supplyHigh voltage power supply for anodic bonding (additional tooling may be required)[2]—
Electronics rackElectronics Rack[2]—
Computer & softwareComputer & Software[2]—

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Sources (2)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing