Comparison ledger
EV Group 850, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 850EV Group | 1 WBS 1 Wafer SubstrateLogitech |
|---|---|---|
| OEM | EV Group | Logitech |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 850 | Logitech 1 WBS 1 Wafer Substrate |
| Cited variants | — | |
| Specifications | ||
| Wafer sizes | 2, 3, 4, 5, 6, 8, 12 inch[3] | — |
| Vintage | 2005 Vintage[3] | — |
| Wafer diameter (LT) | 100 - 200, 150 - 300 mm[1] | — |
| Operation (LT) | Fully-automated cassette-to-cassette operation[1] | — |
| Alignment type (LT) | Flat-to-flat or notch-to-notch[1] | — |
| Alignment accuracy (LT) | X and Y: ± 50 µm, Theta: ± 0.1 °[1] | — |
| Bond force (LT) | Up to 5 N[1] | — |
| Vacuum system (LT) | 9x10-2 mbar standard; 9x10-3 mbar option with turbo pump[1] | — |
| Standard process gases (LT) | N2 and O2[1] | — |
| Additional process gases (LT) | High purity gases (99.999%), noble gases (Ar, He, Ne, etc.), forming gases (N2, Ar with up to 4 % H2)[1] | — |
| Cleaning methods (LT) | Rinse standard; megasonic nozzle, megasonic area transducer, jet nozzle, brush optional[1] | — |
| Cleaning media (LT) | DI-water standard; NH4OH and H2O2 with max. 2 % concentration option[1] | — |
| Spinner chuck rotation (LT) | Up to 3000 rpm in 5 s[1] | — |
| Wafer diameter (TB) | Up to 300 mm, oversized carrier possible[2] | — |
| Operation (TB) | Fully automated temporary wafer bonding of a substrate on a rigid carrier[2] | — |
| Wafer Size | — | 6 inch[4] |
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