Comparison ledger
CEE 100, Nikon i 12 D, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | i 12 DNikon |
|---|---|---|
| OEM | CEE | Nikon |
| Category | Lithography | Lithography |
| Wafer size | 6" | Wafer Equipment |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Nikon i 12 D |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | Wafer Equipment[5] |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| Version | — | 150 mm[3] |
| Resolution | — | 0.35μm or less (High resolution, positive resist film of 1.0μm thickness )[3] |
| Configuration | — | Focus Calibration Repeatability:[3] |
| Measurement of Initial Heat | — | 180 min[3] |
| Measurement of Initial Cool | — | 240 min[3] |
| Reticle Blind Setting Accuracy | — | + 0.4 to + 0.8 mm (on reticle)[3] |
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