Comparison ledger
Canon MPA 600 FA Projection, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150 e MaskSUSS MicroTec | |
|---|---|---|
| OEM | Canon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon MPA 600 FA Projection | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Type | Projection Aligner[1] | — |
| Auto Feeder | Single or double, cassette to cassette, backside wafer handling[2] | — |
| Wafer Sizes | 4", 5", 6"[2] | — |
| Mask Sizes | 5", 6", 7"[2] | — |
| Resolution | 1.5 um (using positive resist)[2] | — |
| Illumination | 2 kW high pressure mercury lamp[2] | — |
| Wavelengths used | 365 nm (i-line), 405 nm (h-line), 436 nm (g-line)[2] | — |
| Intensity | (@ 1800 watts power output) 4" wafer - more than 700 mW, 5" wafer - more than 650 mW, 6" wafer - more than 600 mW[2] | — |
| Intensity / Exposure Uniformity | within +-3%[2] | — |
| Constant Temperature Control (CTC) | Monitors and controls system temperature within +-.3 degrees C.[2] | — |
| PDC | Matic Distortion Control provides fine distortion compensation[2] | — |
| Automatic Alignment | HeNe (633 nm) laser beam scanning[2] | — |
| Alignment Modes | Spot Beam / Sheet Beam[2] | — |
| Accuracy | 3 sigma <= .54 um[2] | — |
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