Comparison ledger
ASML PAS 2500, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PAS 2500ASML | 1505 G 6 ENikon |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1985– | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | 1985 Introduction · 1986 Machine year | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML PAS 2500 | Nikon 1505 |
| Cited variants | — | |
| Specifications | ||
| Wafer size (base model) | 5 inches[3] | — |
| Resolution (PAS 2500/10) | 900 nm[1] | — |
| Overlay accuracy (PAS 2500/10) | 250 nm[1] | — |
| Throughput (PAS 2500/10) | 66 wafers per hour (150 mm)[1] | — |
| Wafer size (PAS 2500/40) | 150 mm (6 inches)[2] | — |
| Reticle masking (PAS 2500/40) | Four independent blades; full field of travel[2] | — |
| Alignment system (PAS 2500/40) | Dual automatic through-the-lens using diffraction grating marks directly referenced to reticle alignment system[2] | — |
| Illumination system (PAS 2500/40) | Elliptical mirror and fly's eye integrator[2] | — |
| Position control (PAS 2500/40) | Three axis HP laser interferometer system[2] | — |
| Model | PAS 2500[3] | 1505 G 6 E[4] |
| Wafer size | 5 inch[3] | — |
| Line width | 900 nanometers[1] | — |
| Layer placement accuracy | 250 nanometers[1] | — |
| Production capacity | 66 wafers of 150 millimeters per hour[1] | — |
| Configuration | — | 5" reticle[4] |
| Resolution | — | 650 nm[5] |
| Numerical Aperture | — | 0.54[5] |
| Reduction | — | 5x[5] |
| Exposure Field | — | 15 x 15 mm[5] |
| Alignment Accuracy | — | 130 nm[5] |
| Wafer Size | — | 4 inch[4] |
| Light Source | — | g-line[6] |
| Introduction Year | — | 1988[5] |
| NA (Numerical Aperture) | — | 0.54[5] |
| Make | — | Nikon[4] |
| Category | — | Stepper[4] |
| Wafer Sizes | — | 4 inch[4] |
| Exposure type | — | g-line[5] |
| NA | — | 0.54[5] |
| Exposure field | — | 9.3 x 18.8 mm[5] |
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