Comparison ledger
ASML 5500, Heidelberg Instruments VPG200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500ASML | VPG200Heidelberg Instruments |
|---|---|---|
| OEM | ASML | Heidelberg Instruments |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 248 nm (KrF) DUV | 600 nm minimum resolution with thin photoresist (< 1 µm) |
| Introduced | — | — |
| Production run | 1991– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | Linux workstation |
| Generation | — | — |
| Family | ASML 5500 | Heidelberg Instruments VPG200 |
| Cited variants | ||
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | PAS 5500/300[1] | — |
| Description | Deep-UV Stepper Photolithography[1] | — |
| Exposure wavelength | 248 nm (KrF)[1] | — |
| Configured wafer size | 4 in wafers[1] | — |
| Maximum wafer size | 4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1] | — |
| Layer-to-layer overlay accuracy | better than 30 nm[1] | — |
| Minimum feature size | ≤150 nm isolated lines; ≤200 nm dense patterns[1] | 500 nm[5] |
| Full-field useable exposure area | intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1] | — |
| Sample size | 100 mm wafers with SEMI std. major flat[1] | — |
| Alignment accuracy | < 50 nm[1] | <300, 400, 800 nm[5] |
| Wafer thickness | minimum approximately 200 µm; maximum approximately 1.1 mm[1] | — |
| Maximum dose | ~100 mJ[1] | — |
| Minimum Feature Size (dense) | ≤200 nm[1] | — |
| Minimum Feature Size (isolated lines) | ≤150 nm[1] | — |
| Overlay Accuracy | Better than 30 nm[1] | — |
| Maximum Field Size (usable exposure area) | 22 mm x 27 mm rectangle within a 31 mm diameter circle[1] | — |
| Wafer Size (standard) | 4 inch (100 mm)[1] | — |
| Throughput | Typically minutes per wafer (multiple 4-inch wafers)[1] | — |
| Reduction Ratio | 5x (for some variants, e.g., /200 and /60)[2] | — |
| Numerical Aperture (variable) | 0.48-0.60 (for /200 variant)[2] | — |
| Alignment Accuracy | < 50 nm (for /300 variant)[1] | — |
| Resolution (PAS 5500/300) | ≤150 nm isolated lines, ≤200 nm dense patterns[1] | — |
| Exposure wavelength (PAS 5500/60) | 365 nm[3] | — |
| Reduction ratio (PAS 5500/60) | 5:1[3] | — |
| Wafer size (PAS 5500/300) | 100 mm (4 inch) wafers with SEMI standard flat[1] | — |
| Overlay accuracy (PAS 5500/300) | better than 30 nm[1] | — |
| Resolution (PAS 5500/200) | 350 nm[2] | — |
| Numerical aperture (PAS 5500/200) | 0.48-0.60 variable[2] | — |
| Maximum field size (PAS 5500/200) | 22x22 mm[2] | — |
| Minimum feature size (PAS 5500/60) | 450 nm[3] | — |
| Exposure source | — | 355 nm wavelength, pulsed Q-switched DPSS laser[5] |
| Alignment cameras | — | 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only)[5] |
| Autofocus | — | Real time autofocus[5] |
| Stage system | — | Position control with interferometers, chuck with vacuum for various substrate sizes[5] |
| Supported substrates | — | Masks and reticules (4, 5, 6, 7 inch) and wafer (100 and 150 mm SEMI-standard) cassette station[5] |
| Write heads | — | 3 interchangeable optics: Write Head 4, 10, 20 mm focal length[5] |
| Critical dimension | — | 0.6, 0.9 and 2.0 μm[5] |
| Pattern edge roughness | — | XY direction dependent; max 90, 140 and 250 nm[5] |
| Maximum substrate size | — | 7" x 7" square or 200 mm diameter[5] |
| Maximum exposure area | — | 7" x 7" square[5] |
| Design file compatibility | — | cif, gdsii, dxf, gerber[5] |
| Writing time with handling | — | 5" x 5" square (110 x 110 mm): 7, 18, 65 min[5] |
| Batch processing | — | Up to 20 5" masks or 25 wafers[5] |
| Laser wavelength | — | 355 nm (pulsed Q-switched DPSS laser)[5] |
| Imaging method | — | Projection of two linear arrays of 1000 pixels combined with mechanical stage movement[5] |
| Resolution (minimum) | — | Approximately 600 nm with thin photoresist (< 1 µm) for 4 mm write head[5] |
| Critical dimension (4 mm write head) | — | 0.6 µm[5] |
| Critical dimension (10 mm write head) | — | 0.9 µm[5] |
| Critical dimension (20 mm write head) | — | 2.0 µm[5] |
| Pattern edge roughness (4 mm write head) | — | max 90 nm (XY direction dependent)[5] |
| Pattern edge roughness (10 mm write head) | — | max 140 nm (XY direction dependent)[5] |
| Pattern edge roughness (20 mm write head) | — | max 250 nm (XY direction dependent)[5] |
| Alignment accuracy (4 mm write head) | — | < 300 nm (top side alignment)[5] |
| Alignment accuracy (10 mm write head) | — | < 400 nm (top side alignment)[5] |
| Alignment accuracy (20 mm write head) | — | < 800 nm (top side alignment)[5] |
| Substrate handling | — | Cassette station for masks and reticles (4, 5, 6, 7 inch) and wafers (100 and 150 mm SEMI-standard)[5] |
| Optional write heads (focal length) | — | 4 mm, 10 mm, 20 mm[5] |
| CAD file formats | — | cif, gdsii, dxf, gerber[5] |
| Writing time (5 inch x 5 inch square, with handling) | — | 7 min (4 mm head), 18 min (10 mm head), 65 min (20 mm head)[5] |
| Image reconstruction | — | Projection of two linear arrays of 1000 pixels combined with mechanical movement of the stage[5] |
| Critical Dimension | — | 0.6, 0.9 and 2.0 μm for 4, 10, 20 mm write heads respectively[5] |
| Designs compatibility | — | cif, gdsii, dxf, gerber[5] |
| Interchangeable optics | — | Write Head 4, 10, 20 mm focal length[5] |
| Writing time with handling (5"x5" sq. 110x110 mm) | — | 7, 18, 65 min for 4, 10, 20 mm write heads[5] |
| Alignment | — | 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only); overlay exposure with top side alignment requires wafer flat pre-alignment with maximum tolerance of ±10 mrad[5] |
| Resolution | — | Minimum about 600 nm with thin photoresist thickness (<1 µm)[5] |
| Type | — | Volume Pattern Generator (laser pattern generator)[5] |
| Wafer cassette support | — | 100 and 150 mm SEMI-standard wafers[5] |
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