Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Onto Innovation Nanospec 210, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | Nanospec 210Onto Innovation |
|---|---|---|
| OEM | Applied Materials | Onto Innovation |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Onto Innovation Nanospec 210 |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | Nanospec 210[5] |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Thickness Range | — | 100 to 500,000 angstroms[3] |
| Typical Measurement Time | — | 2.5 seconds[3] |
| Spot Size (5x objective) | — | 50 µm[3] |
| Spot Size (10x objective) | — | 25 µm[3] |
| Spot Size (40x objective) | — | 6.5 µm[3] |
| Resolution | — | 100 angstroms[4] |
| Reproducibility | — | 5Å ±5% depending on film type[3] |
| Film Types Measured | — | Oxide on Silicon, Nitride on Silicon, Negative Resist on Silicon, Polysilicon on Oxide, Negative Resist on Oxide, Nitride on Oxide, Polyimide on Silicon, Positive Resist on Silicon, Positive Resist on Oxide[3] |
| Reflectance Mode | — | Thick Films[3] |
| Manufacturer | — | Onto Innovation (formerly Nanometrics)[5] |