Comparison ledger
Aixtron AIX 2400 G 3 R MOCVD, Aixtron AIX 2400 Planetary Reactor, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AIX 2400 G 3 R MOCVDAixtron | AIX 2400 Planetary ReactorAixtron |
|---|---|---|
| OEM | Aixtron | Aixtron |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron AIX 2400 | Aixtron AIX 2400 |
| Specifications | ||
| Configuration | 7 x 2", x 3", x 4", x 6"[1] | — |
| Tool type | MOCVD (Metal Organic Chemical Vapor Deposition)[2] | — |
| Manufacturer | Aixtron[1] | — |
| Category | Deposition[2] | — |
| Family | Aixtron AIX 2400 family[2] | — |
| Wafer sizes | 2, 3, 4, 6 inch[1] | — |
| Wafer configuration | 7 x 2", x 3", x 4", x 6"[1] | — |
| Process material | GaAs[1] | — |
| Hydrides | 7[1] | — |
| MO (metalorganic) sources | 9[1] | — |
| Phase | — | 3 Phase[3] |
| Frequency | — | 60 Hz[3] |
| Voltage | — | 480 V[3] |
| Power | — | 3 Phase, 60 Hz, 480 V[3] |
| Vintage | — | 1996[3] |
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