Waferpedia

Comparison ledger

1000PversusR3

YES 1000P, YES R3, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
R3YES
OEMYESYES
CategoryWet Processing / CleanWet Processing / Clean
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones1998 Acquisition—
Control system——
Generation——
FamilyYES 1000PYES R3
Specifications
Model1000P[1]—
System typePlasma cleaning system[1]Plasma cleaner / plasma cleaning system[3]
Shelf configurationFour 16 x 16 inch shelves[1]—
Total capacity1024 square inches[1]—
Control systemPLC driven with plain English real time process readout and diagnostics in the event of system abort[1]Sequential microprocessor[3]
Number of shelves4[1]—
Shelf size16 x 16 inches[1]—
Power1000 W[2]—
ConfigurationParallel plate[2]—
Operation modesActive, RIE, Downstream[1]—
Sample size rangeFrom smallest semiconductor chip to large flat panels[1]—
Control—Sequential microprocessor[3]
Program storage—Up to 90 separate one- or two-gas programs in memory[3]
Power supply—500 Watt[3]
Plasma gas inputs—Two standard; optional third input[3]
Backfill input—Standard[3]
Electrode sets—Two 12-inch square electrode sets standard[3]
Sample tray capacity—Two 12 x 12 in. sample trays; total capacity 325 sq.in.[3]
Sample trays—Two 12 x 12 in.; total capacity 325 sq.in.[3]
Controller—Sequential microprocessor; up to 90 stored one- or two-gas programs[3]
Process gas and modes (UC Santa Barbara configuration)—Oxygen; downstream and direct plasma cleaning[4]
Position in series—Smallest of the series; pilot run quantities[3]
Equipment type—Plasma cleaning system[5]
Stored programs—Up to 90 separate one- or two-gas programs[3]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]web.archive.orgweb.archive.org
  4. [4]cnsi.ucsb.educnsi.ucsb.edu
  5. [5]web.archive.orgweb.archive.org