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Comparison ledger

160 XP IonversusKestrel II 750

Varian 160 XP Ion, Varian Kestrel II 750, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMVarianVarian
CategoryIon ImplantationIon Implantation
Wafer size—10 Site Disk, 10 Wafer per Batch
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyVarian 160 XP IonVarian Kestrel II 750
Specifications
Configuration150mm High Current IMP[1]High current[3]
OEMVarian[2]—
Model160 XP Ion[2]—
CategoryIon Implantation[1]Ion Implantation[5]
Tool typeion implanter[1]—
Energy Range—10 - 3750 kV[4]
Wafer size—10 Site Disk, 10 Wafer per Batch[5]
Voltage—30 kV Terminal PS[4]
Wafer Size—8 inch[3]
Batch Size—10 Wafers per Batch[4]
Disk Sites—10 Site Disk[4]
Gas Modules—4 Gas Modules[4]
Gases—Argon (factory inlet), PH3 SDS, AsH3 SDS, BF3 SDS[4]
Automatic Handling—Yes[4]
Software Version—6.41[5]
High Current—Yes[5]
Power Supply Interface (PSI) Controller—Included[5]
Source Vacuum Controller—Included[5]
Manipulator Controller—Included[5]
30 kV Terminal PS—Included[5]
60 kV Tube Lens PS—Included[5]
Handling system—Automatic Handling system[4]
Gas box—Fully Automated Gas Box, 4 Gas Modules[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]Equipment inventory listing
  3. [3]inventory listing
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com