Comparison ledger
Tegal 6510, Tegal 903, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6510Tegal | 903Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | — |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6510 | Tegal 903 |
| Cited variants | — | |
| Specifications | ||
| Tool type | high-density CCP plasma etch tool[3] | diode plasma etch tool[5] |
| RF power | dual-frequency RF power application[3] | — |
| Plasma confinement | magnetic plasma confinement[3] | — |
| Configuration | one or two HRē etch modules on a high-vacuum cluster platform[3] | — |
| Wafer size | 100mm – 200mm[3] | 3", 100mm – 150mm[1] |
| Optimization node | optimized for device design rules down to 90nm[3] | — |
| Process type | High-density CCP plasma etch[3] | — |
| RF configuration | Dual-frequency RF power application[3] | — |
| Magnetic confinement | Yes[3] | — |
| Modules | One or two HRe etch modules on a high-vacuum cluster platform[3] | — |
| Design rule | 90nm[3] | — |
| Wafer size support | — | 75-150 mm round silicon and GaAs substrates; rectangular substrates from 100-125 mm on a side[5] |
| Reactors/materials | — | narrow gap RF diode reactor; plasma etch of silicon oxide and silicon nitride materials[1] |
| Reactor type | — | narrow gap RF diode reactor[1] |
| Materials | — | silicon oxide and silicon nitride[1] |
| Substrate range | — | 75–150 mm round silicon and GaAs substrates; rectangular substrates from 100–125 mm on a side[5] |
| Transport system | — | Production-proven transport system[5] |
| Round substrate range | — | 75-150 mm round silicon and GaAs substrates[5] |
| Rectangular substrate range | — | 100-125 mm on a side[5] |
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