Comparison ledger
Tegal 1511e, Tegal 903e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1511eTegal | 903eTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | three- to six-inch wafers | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | — |
| Introduced | 1984 | — |
| Production run | 1984– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2000 sale announced · 2001 order announced |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 1511e | Tegal 903e |
| Specifications | ||
| tool type | tri-electrode dual-frequency plasma etch system[1] | — |
| wafer size | three- to six-inch wafers[1] | — |
| first sold | 1984[1] | — |
| system characteristic | first vacuum-loadlocked dual-frequency tri-electrode etch system[1] | — |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | Yes[1] | — |
| Tool type | — | diode plasma etch tool[2] |
| Substrate diameter range | — | 75 mm to 150 mm round silicon and gallium arsenide (GaAs) substrates[2] |
| Substrate format | — | rectangular substrates from 100 mm to 125 mm on a side[2] |
| Wafer/substrate capacity | — | 75 mm to 150 mm round substrates[2] |
| Rectangular substrate capacity | — | 100 mm to 125 mm on a side[2] |
| Configured form | — | "through the wall" configuration[4] |
| Application | — | etching oxide contacts[2] |
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