Comparison ledger
STS Multiplex ASE ICP Deep Silicon, Tegal 1511e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1511eTegal | |
|---|---|---|
| OEM | STS | Tegal |
| Category | Etch | Etch |
| Wafer size | Manual wafer lock | three- to six-inch wafers |
| Process node | — | — |
| Introduced | — | 1984 |
| Production run | — | 1984– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | STS Multiplex | Tegal 1511e |
| Specifications | ||
| Wafer size | Manual wafer lock[1] | — |
| Configuration | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[1] | — |
| OEM | STS[1] | — |
| Model | Multiplex ASE[1] | — |
| Equipment type | Deep Silicon Etcher (Inductively Coupled Plasma)[1] | — |
| Wafer sizes | 6 inch[1] | — |
| Wafer lock | Manual wafer lock[1] | — |
| Plasma frequency | Low and high frequency ICP (Inductively Coupled Plasma)[1] | — |
| Process description | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[1] | — |
| Application | Deep Si trench etching of a single 6" [150mm] substrate[1] | — |
| tool type | — | tri-electrode dual-frequency plasma etch system[2] |
| wafer size | — | three- to six-inch wafers[2] |
| first sold | — | 1984[2] |
| system characteristic | — | first vacuum-loadlocked dual-frequency tri-electrode etch system[2] |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | — | Yes[2] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →