Waferpedia

Comparison ledger

310versusFC-2000

STS 310, Temescal FC-2000, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
310STS
FC-2000Temescal
OEMSTSTemescal
CategoryDepositionDeposition
Wafer size100mm100mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilySTS 310Temescal FC-2000
Cited variants—
Specifications
Tool typeplasma-enhanced chemical-vapor-deposition (PECVD) system[2]—
Wafer size100-mm-diameter silicon wafers[2]—
Deposition materialsilicon dioxide[2]—
System name—Temescal FC-2000 deposition system[1]
System type—Bell jar deposition system[1]
Operation—Fast-cycle, load-locked system[1]
Vacuum handling—Allows the source to remain under vacuum during substrate reloading[1]
Source tray—Supports multiple electron beam and resistance sources[1]
Standard source-to-substrate distance—19.5 in[1]
Optional source-to-substrate distance with extension collar—27.5 in[1]
Bell jar diameter—20 in (508 mm)[1]
FC-2000 source tray diameter—18 in (457 mm)[1]
Control system—Temescal Control System (TCS)[1]
Deposition controller—Inficon XTC/3 deposition controller[1]
Electron beam power supply—Temescal model CV-6SLX electron beam power supply[1]
Beam sweep controller—Temescal SuperSweep64 programmable beam sweep controller[1]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]nanocenter.umd.edunanocenter.umd.edu