Comparison ledger
PVA TePla 300, TEGAL 211, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 300PVA TePla | 211TEGAL |
|---|---|---|
| OEM | PVA TePla | TEGAL |
| Category | Resist Processing | Resist Processing |
| Wafer size | 75 mm to 100 mm | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | PVA TePla 300 | TEGAL 211 |
| Cited variants | — | |
| Specifications | ||
| Plasma type | High frequency plasma[2] | — |
| Plasma frequency | 2.45 GHz[2] | — |
| Plasma power | 200 to 1000 W[2] | — |
| Gas | O2 (max. flow 500 ml/min)[2] | — |
| Chamber | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[2] | — |
| Wafer capacity | Quartz holders for 25 wafers[2] | — |
| Wafer size range | 75 mm to 100 mm[2] | — |
| Micro-electronic compatibility | Not micro-electronic compatible[2] | — |
| Category | Plasma etcher (resist strip / surface activation)[2] | — |
| Positive resist etch rate | 350 nm/min[2] | — |
| Compatibility | Not micro-electronic compatible; gold allowed; Si, glass, Pyrex wafers[2] | — |
| Power Range | 200 to 1000 W (or 0-1000 W)[2] | — |
| Process Gases | O2, Ar, N2, CF4[3] | — |
| Chamber Material | Quartz[2] | Aluminum[4] |
| Chamber Dimensions (internal) | Diameter 245 mm x Depth 380 mm[2] | — |
| Wafer Holder Capacity | 25 wafers[2] | — |
| Wafer Size | 75 mm to 100 mm[2] | — |
| Wafer Size (alternate) | up to 6 inches[1] | — |
| Process Pressure | 0.6 to 1.5 mbar[1] | — |
| Restricted Materials | Materials that deteriorate in oxygen (Ag, Cu, Cr, Fe, etc.) should not be processed; no Cr or other metals in chamber[2] | — |
| Microwave frequency | 2.45 GHz[2] | — |
| Power range | 200 to 1000 W[2] | — |
| Batch size | Up to 25 wafers[2] | — |
| Wafer diameter (standard carrier) | 75 mm to 100 mm[2] | — |
| Process gases | O2, CF4, Ar, N2[3] | — |
| Maximum O2 flow | 500 ml/min[2] | — |
| Chamber dimensions (internal diameter x depth) | 245 mm x 380 mm[2] | — |
| Chamber internal dimensions | Dint. 245 mm x Prof. 380 mm[2] | — |
| Gas 1 | O2 (max. flow 500 ml/min)[2] | — |
| Resist strip etch rate | 350 nm/min depending on number of wafers[2] | — |
| Faraday cage | Available[2] | — |
| Process gas | O2 (max flow 500 ml/min)[2] | — |
| Chamber dimensions | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[2] | — |
| Process type | High-frequency plasma[2] | — |
| Applications | Photoresist stripping; wafer surface cleaning; hydrophilic surface activation of plastics surfaces[2] | — |
| Carrier capacity | Quartz holders for 25 wafers[2] | — |
| Not micro-electronic compatible | This equipment is NOT micro-electronic compatible.[2] | — |
| Refurbished RTP RTA | — | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[4] |
| KLA-Tencor Spare Parts and Service | — | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[4] |
| Refurbished Isotropic Plasma Etcher | — | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[4] |
| Refurbished PECVD, ALD Equipment | — | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[4] |
| Refurbished Mask Aligner | — | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[4] |
| Refurbished Bonding | — | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[4] |
| Refurbished Wafer Prober | — | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[4] |
| Process Type | — | Plasma Asher/Etcher[5] |
| Wafer Size (max) | — | 3 inch[5] |
| Form Factor | — | Table top[5] |
| Chamber Internal Dimensions | — | 6 x 6 x 3.75 inches[4] |
| Timer Range | — | 0-99 minutes[5] |
Plan your fab
Building a Resist Processing process? Get a complete equipment list.
Open the fab equipment planner →