Comparison ledger
Plasma-Therm 790 + RIE, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 790 + RIEPlasma-Therm | 1512eTegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm 790 + RIE | Tegal 1512e |
| Specifications | ||
| Process type | Reactive ion etcher / reactive ion etch system[1] | — |
| Configured for | RIE (Reactive Ion Etching) processing of silicon substrates[2] | — |
| Maximum wafer size | 200 mm[3] | — |
| Platen size | 279 mm[3] | — |
| Platen/sample table | 6" water cooled sample table[4] | — |
| RF power supply | 500 W RF power supply[4] | — |
| RF generator | 500W RF generator[5] | — |
| RF frequency | 13.56 MHz[5] | — |
| Electrodes | 240 mm diameter[5] | — |
| Chamber | Non load-locked chamber[5] | — |
| Gas delivery | Shower head gas delivery system[5] | — |
| Gas channels | Six MFC gas channels[5] | — |
| Process gases | SF6, CHF3, CF4, oxygen (O2), argon (Ar); previous gases also listed as AR, N2, O2, SF6, CHF3, CF4[3] | — |
| Pressure range | < 900 mTorr[3] | — |
| Power range | < 350 W[3] | — |
| Vacuum system | Turbo pumped vacuum system with roughing pump[5] | — |
| Tool type | — | Industrial RIE plasma etcher system[6] |
| Stated configuration | — | With modules assembly for CI-4222[6] |
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