Comparison ledger
Pfeiffer ACP28G, STS 310, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ACP28GPfeiffer | 310STS |
|---|---|---|
| OEM | Pfeiffer | STS |
| Category | Deposition | Deposition |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Pfeiffer ACP28G | STS 310 |
| Specifications | ||
| Pump type | Dry pump[1] | — |
| Role | Loadlock primary pump[1] | — |
| Manufacturer | Pfeiffer[1] | — |
| Contextual system | EVA 451 evaporator[1] | — |
| Intended application | Pumping traces of corrosive gas[2] | — |
| Pumping mechanism | Frictionless multi-stage roots design[2] | — |
| Voltage range | 90 to 254 VAC at 50 or 60 Hz[2] | — |
| Overhaul interval | 22,000 hours[2] | — |
| Tool type | — | plasma-enhanced chemical-vapor-deposition (PECVD) system[3] |
| Wafer size | — | 100-mm-diameter silicon wafers[3] |
| Deposition material | — | silicon dioxide[3] |
| Process | — | Plasma-enhanced chemical vapor deposition (PECVD)[3] |
| Wafer Size | — | 100 mm[3] |
| Deposited Materials | — | Silicon dioxide (oxide) and silicon nitride (SiNx)[3] |
| Oxide Recipe Details | — | 2% SiH4 in Ar at 400 sccm, N2O at 900 sccm, 60 W at 13.56 MHz, 650 mtorr, 300 °C[3] |
| Nitride Recipe (Low RI) Details | — | 2% SiH4 in Ar at 200 sccm, N2 at 2000 sccm, power alternating between 30 W at 13.56 MHz for 6 s and 25 W at 187 kHz for 3 s, 650 mtorr, 300 °C[3] |
| Nitride Recipe (High RI) Modification | — | Increase 2% SiH4/Ar flow to 500 sccm[3] |
| Temperature | — | 300 °C[3] |
| Pressure | — | 650 mtorr[3] |
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