Comparison ledger
Oxford Instruments PlasmaPro100, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro100Oxford Instruments | 6540Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro100 | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| OEM | Oxford[2] | — |
| Model | PlasmaPro100[2] | — |
| Equipment type | dry etcher[2] | — |
| Plasma source | ICP plasma etcher[2] | — |
| Wafer size | 100mm wafers[2] | 100mm – 200mm[1] |
| Chemistry | chlorine and bromine chemistry[2] | — |
| Clamping | electrostatic clamping[2] | — |
| Compatibility | microelectronic compatible equipment[2] | — |
| Applications | metals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[2] | — |
| Endpoint detection | laser reflectometry/interferometry and optical emission spectroscopy (EOS) endpoint detection[2] | — |
| Tool type | ICP plasma etcher[2] | — |
| End-point detection | laser reflectometry/interferometry end-point-detection[2] | — |
| Type | — | high-density plasma etch system[3] |
| Reactor | — | HRe reactor / HRe™ reactor[3] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[3] |
| Plasma confinement | — | magnetic plasma confinement[3] |
| Optimized design rule | — | down to 0.13 micron[3] |
| RF power | — | dual-frequency RF power application[1] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
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