Waferpedia

Comparison ledger

Plasmalab-80plus-Cloey-Sversus6520

Oxford Instruments Plasmalab-80plus-Cloey-S, Tegal 6520, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Plasmalab-80plus-Cloey-SOxford Instruments
6520Tegal
OEMOxford InstrumentsTegal
CategoryEtchEtch
Wafer size100mm100mm
Process node——
Introduced—2001
Production run—2001–
Lifecycle——
Lifecycle milestones—2001 Order announcement
Control system——
Generation——
FamilyOxford Instruments Plasmalab-80plus-Cloey-STegal 6520
Specifications
Process gasesBCl3, Cl2, N2, CF4, O2, Ar[1]—
UseEtching of compound semiconductors and metals[1]—
Allowed masksPhotoresist and dielectrics[1]—
Platen size238 mm[1]—
Power range< 270 Watts[1]—
MFC flow range - BCl30 – 100 sccm[1]—
MFC flow range - Cl20 – 50 sccm[1]—
MFC flow range - CF40 – 100 sccm[1]—
MFC flow range - O20 – 50 sccm[1]—
MFC flow range - Ar0 – 100 sccm[1]—
MFC flow range - N20 – 100 sccm[1]—
Pressure range< 250 mTorr[1]—
Tool type—high-density CCP plasma etch tool[2]
RF power—dual-frequency RF power application[2]
Plasma confinement—magnetic plasma confinement[2]
Wafer size—100mm – 200mm[2]
Process capability—Rinse-Strip-Rinse (RSR)[3]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (4)Every fact above is drawn from these public sources
  1. [1]cores.research.asu.educores.research.asu.edu
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org
  4. [4]web.archive.orgweb.archive.org