Comparison ledger
Oxford Instruments Plasmalab-80plus-Cloey-S, Tegal 6510, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab-80plus-Cloey-SOxford Instruments | 6510Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab-80plus-Cloey-S | Tegal 6510 |
| Specifications | ||
| Process gases | BCl3, Cl2, N2, CF4, O2, Ar[1] | — |
| Use | Etching of compound semiconductors and metals[1] | — |
| Allowed masks | Photoresist and dielectrics[1] | — |
| Platen size | 238 mm[1] | — |
| Power range | < 270 Watts[1] | — |
| MFC flow range - BCl3 | 0 – 100 sccm[1] | — |
| MFC flow range - Cl2 | 0 – 50 sccm[1] | — |
| MFC flow range - CF4 | 0 – 100 sccm[1] | — |
| MFC flow range - O2 | 0 – 50 sccm[1] | — |
| MFC flow range - Ar | 0 – 100 sccm[1] | — |
| MFC flow range - N2 | 0 – 100 sccm[1] | — |
| Pressure range | < 250 mTorr[1] | — |
| Tool type | — | high-density CCP plasma etch tool[2] |
| RF power | — | dual-frequency RF power application[2] |
| Plasma confinement | — | magnetic plasma confinement[2] |
| Configuration | — | one or two HRē etch modules on a high-vacuum cluster platform[2] |
| Wafer size | — | 100mm – 200mm[2] |
| Optimization node | — | optimized for device design rules down to 90nm[2] |
| Process type | — | High-density CCP plasma etch[2] |
| RF configuration | — | Dual-frequency RF power application[2] |
| Magnetic confinement | — | Yes[2] |
| Modules | — | One or two HRe etch modules on a high-vacuum cluster platform[2] |
| Design rule | — | 90nm[2] |
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