Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tokyo Electron TE 8401 Poly, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | TE 8401 PolyTokyo Electron |
|---|---|---|
| OEM | Oxford Instruments | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tokyo Electron TE 8401 |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | 8-inch wafers[1] |
| Configuration | — | Single chamber[3] |
| LD | — | 2 each[3] |
| Gas | — | He, O2, CF4, HBr, CL2[3] |
| OS | — | EPROM based system[3] |
| Manufacturer | — | Tokyo Electron[3] |
| Model | — | TE 8401 Poly[3] |
| Pumps | — | 2[3] |
| Gas delivery | — | He, O2, CF4, HBr, CL2[3] |
| Vintage | — | 1998[3] |
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