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Comparison ledger

100 ICP FluorineversusScientific FEI OptiFIB Taipan G 2 FIB

Oxford Instruments 100 ICP Fluorine, Thermo Fisher Scientific FEI OptiFIB Taipan G 2 FIB, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsThermo Fisher
CategoryEtchEtch
Wafer size——
Process node—7 nm
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineThermo Fisher Scientific FEI OptiFIB Taipan G 2 FIB
Cited variants—
  • OptiFIB Taipan G 2[1]
  • 7 nm CE Upgrade[2]
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[3]—
Cryo DRIE etch rateup to 5 µm/min[3]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[3]—
Configuration—7 nm[1]
Full Load Amps—24 A[1]
Full Load—24 A[4]
Largest Load—13 A[4]
Acceleration Voltage—0.5-30 kV[6]
Beam Current Range—250 fA up to 20 nA[6]
Stage Travel (X,Y,Z)—75 x 75 x 20 mm[6]
Beam Drift Stability—~4 nm/min (drift)[6]
Conductor Resistivity (for deposit)—≤ 200 µΩ·cm[6]
Insulator Resistivity—≥ 1e15 µΩ·cm[6]
FIB Column / Type—Ion-photon Coaxial Taipan Column[6]
Image Resolution—~ 2.7 nm at 250 fA, 30 kV (graphite sample)[6]
Type—Focused Ion Beam (FIB)[1]
Node capability—7 nm[4]
Electrical requirements—200-240 VAC, Single Phase, 50/60 Hz[1]
Full load current—24 A[1]
Largest load current—13 A[4]
Vintage year—2015[1]
Tool type—Focused Ion Beam (FIB)[1]
Node—7 nm[1]
Power—200-240 VAC[1]
Phase—Single Phase[1]
Frequency—50/60 Hz[1]
Upgrade—CE Upgrade[4]
Upgrade note—Upgrade from 10 nm G1 to 7 nm G2[2]
Condition note—Without HDD / SSD[1]
Electrical rack note—Tapian Electrical Rack[5]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]inventory listing