Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 901G, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 901GTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; square and rectangular substrates |
| Process node | — | — |
| Introduced | — | 1999 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 901G |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Tool type | — | diode plasma etcher[2] |
| Configuration | — | special configuration for GaAs processing[2] |
| Configured features | — | special sensors and electrode designs[3] |
| Intended applications on platform | — | pad, zero layer, non-selective nitride, backside, planarization, oxide, nitride, poly, and III-V materials applications such as GaAs[3] |
| Substrate sizes on platform | — | 75 mm to 150 mm round substrates as well as square and rectangular substrates[3] |
| Equipment Type | — | Diode plasma etcher[2] |
| Process | — | Plasma etching[2] |
| Substrate Size | — | 75 mm to 150 mm round substrates; square and rectangular substrates[3] |
| Series | — | 900 series[2] |
| Installed Base (900 Series) | — | More than 1,300 systems worldwide[2] |
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