Comparison ledger
Oxford Instruments 100 ICP Fluorine, STS ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | ICPSTS |
|---|---|---|
| OEM | Oxford Instruments | STS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | STS ICP |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] | — |
| Cryo DRIE etch rate | up to 5 µm/min[3] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[3] | 100 mm wafers[2] |
| Voltage | — | 400 V[4] |
| Frequency | — | 50 Hz[4] |
| Technology | — | Inductively Coupled Plasma (ICP)[4] |
| Tool type | — | Inductively coupled plasma etcher[4] |
| Electrical configuration | — | 400 V, 50 Hz[4] |
| Process class | — | Dry etcher[2] |
| Chemistry | — | Chlorine and bromine chemistry[2] |
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