Waferpedia

Comparison ledger

808versusCleanTrack ACT 8

OAI 808, Tokyo Electron CleanTrack ACT 8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
808OAI
CleanTrack ACT 8Tokyo Electron
OEMOAITokyo Electron
CategoryLithographyLithography
Wafer size100mm100mm
Process node—DUV lithography
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOAI 808Tokyo Electron CleanTrack ACT 8
Specifications
Typesemi-automated, four-camera, optical front- and backside mask aligner[1]—
Motorized featuresmotorized backside focus, motorized auto leveling, auto gap setting[1]—
Size2", 100mm, 150mm, 200mm pieces[1]—
Mask size4"x4"; 5"x5", 7"x7", and 9"x9"[1]—
Top side alignment accuracy± 1.0µm 3σ[1]—
Bottom side alignment accuracy± 1.25µm 3σ[1]—
Large gap alignment accuracyOption / ± 1.5µm 3σ[1]—
ResolutionVacuum + Hard Contact ≤ 1 µm; Hard Contact ≤ 1.5 µm; Soft Contact ≤ 2.0 µm; Proximity ≥ 3.0 µm[1]—
Exposure wavelength350 · ´50 nm[1]—
Mercury arc lamp350 W[1]—
ModelOAI 808 Aligner[1]—
DescriptionSemi-automated, four-camera, optical front- and backside mask aligner[2]—
Alignment accuracyTop side alignment: ± 1.0µm 3σ; bottom side alignment: ± 1.25µm 3σ; large gap alignment: option / ± 1.5µm 3σ[1]—
LampMercury arc lamp, 350 W[1]—
Supported substrate sizes5 mm to 200 mm[1]—
Thickness0.1–10 mm[1]—
Equipment type—Industry-standard wafer coater and developer[3]
Lithography mode—DUV lithography[3]
Exposure interface—In-line exposure unit interface[3]
Throughput / footprint—High throughput in a small footprint[3]
Cluster configuration—Coater and developer track in-line with an ASML PAS5500/350C stepper[3]
Configured wafer size—100 mm (4") wafers[3]
Convertible wafer size—150 mm (6") wafers[3]
Process materials—KrF photoresist and ancillary anti-reflective coatings[3]
Track blocks—Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[3]
Wafer size—100 mm (4 inch) standard, convertible to 150 mm (6 inch) on demand[3]
Lithography type—DUV (KrF)[3]
In-line stepper interface—ASML PAS5500/350C[3]
Cassette ports—Four (two for 100 mm, two for 150 mm)[3]
Resist pump lines—4 for photoresist (COT), 2 for BARC (BCT)[3]
Developer lines—2 pressure-driven lines[3]
BARC materials supported—DS-K101 (Brewer Science), DUV-42P[3]
Photoresists supported—M108Y (JSR Corporation, 0.18 μm), M35G (0.25 μm)[3]
Developer used—TMA238WA[3]
Solvent used—Microposit EC Solvent (Dupont)[3]
Temperature/humidity control—Internal laminar flow with regulated temperature, humidity, and cup temperature/humidity controller (T&H)[3]
Water Flow—Left to Right[4]
Software Version—1.18.003[5]
CIM—SECS[5]
Handler System—CRA, PRA (2)[5]
Factory Interface—SMIF (3)[5]
Coater/Developer—Wafer coater and developer[3]
Configuration—In-line with ASML PAS5500/350C stepper forming a DUV lithography cluster[3]
Wafer Size (Configured)—100 mm (4")[3]
Wafer Size (Conversion Possible)—150 mm (6") - rare and on-demand[3]
Main Blocks—Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[3]
Spinning Units—Bottom-layer Coater (BCT), Coater (COT), Developer (DEV)[3]
Thermal Plates—Low-temperature Hot Plate, High-temperature Hot Plate, High-speed Chill Plate, ADHesion plates, Precision Hot Plates, Transition Station, Transition Chill Plate[3]
Interface Buffer—25-slot buffer[3]
Photoresist—KrF photoresist (M108Y, M35G)[3]
BARC—DS-K101 and DUV-42P[3]
Developer—TMA238WA[3]
External Modules—AC Power Box, Chemical Cabinet, Temperature and Humidity Controller, Thermostatic Water Supply[3]
In-line exposure unit—ASML PAS5500/350C[3]
Wafer capacity (cassette ports)—4[3]
BARC types—DS-K101 (Brewer Science) and DUV42P[3]
Photoresist types—M108Y (JSR Corporation) and M35G[3]
Exposure unit interface—in-line exposure unit interface[3]
Chemical filters—ULPA chemical filters[3]
Ovens—high-precision ovens[3]
Conversion wafer size—150 mm (6") wafers[3]
Photoresist chemistry—KrF photoresist[3]
Ancillary coating—AntiReflective Coatings[3]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]cores.research.asu.educores.research.asu.edu
  2. [2]cores.research.asu.educores.research.asu.edu
  3. [3]epfl.chepfl.ch
  4. [4]inventory listing
  5. [5]inventory listing