Comparison ledger
Lam Research 9400, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 9400Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 9400 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| OEM | Lam Research[1] | — |
| Model | TCP 9400[1] | — |
| Tool name | Lam Research TCP 9400 Poly Etcher[1] | — |
| Process category | Inductively Coupled Plasma Etching (ICP)[1] | — |
| Cleanliness group | Clean, Semiclean[1] | — |
| Use | for poly and Si etches[1] | — |
| Maximum etch depth | 3 um[1] | — |
| Process materials | Poly and Si[1] | — |
| Cleanliness | Clean, Semiclean[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] |
| Cryo DRIE etch rate | — | up to 5 µm/min[2] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[2] |
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