Waferpedia

Comparison ledger

2300 Multi-Processversus100 ICP Fluorine

Lam Research 2300 Multi-Process, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
2300 Multi-ProcessLam Research
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300 Multi-ProcessOxford Instruments 100 ICP Fluorine
Specifications
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[1]
Cryo DRIE etch rate—up to 5 µm/min[1]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu