Waferpedia

Comparison ledger

.496 PSL WaferversusCandela 8520 Wafer

KLA .496 PSL Wafer, KLA Candela 8520 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMKLAKLA
CategoryMetrology & InspectionMetrology & Inspection
Wafer size—Wafer Thickness 350μm ~ 1100μm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyKLA .496 PSL WaferKLA Candela 8520
Specifications
ConfigurationNIST Traceable[1]50/60 Hz[3]
Wafer size8 inch[1]Wafer Thickness 350μm ~ 1100μm[4]
TraceabilityNIST Traceable[1]—
Compatible systemsCapable on Surfscan 6xy0 and SP1[1]—
CategoryMetrology & Inspection[2]Wafer Inspection System[3]
Voltage—208 VAC[3]
Largest Load—8 A[3]
Phase—1 Phase[4]
CDA Pressure—100 psi / 689 KPa (± 10% range)[4]
Flow—2 SCFM / 80 L/min (± 10% range).[4]
AMC—maximum concentration of Volatile Organic Compounds (VOC) must be less than 150 ng/l.[4]
Moisture Content—less than 20 PPM at 1.0 atm, corresponding to a dewpoint of -30° Celsius (-22°F).[4]
Vacuum Pressure—-680 mm Hg / -90 KPa (± 10% range).[4]
OEM—KLA[3]
Model—Candela 8520 Wafer[3]
Equipment type—Wafer inspection system[3]
Wafer thickness—350μm ~ 1100μm[4]
Power—230 V[4]
Electrical phase—1 Phase[4]
Electrical wiring—3 Wire[4]
Current—20 amps[4]
Frequency—50/60 Hz[4]
Wafer carrier—2 FUP 6 and 8[4]
Wafer mapping sensor—Micro Optical Sensor[4]
Interface—SECS-GEM[4]
CDA flow—2 SCFM / 80 L/min (± 10% range)[4]
Vacuum flow—0.64 SCFM / 18 L/min (± 10% range)[4]
Laser 1—405 nm wavelength, 60 mW power, Class IIIb per CDRH 21CFR 1040[4]
Laser 2—355 nm wavelength, 20 mW power, Class IIIb per CDRH 21CFR 1040[4]
Electrical—1 Phase, 3 Wire, 230 V, 20 amps, 50/60 Hz[4]
Laser wavelengths—405 nm and 355 nm[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]inventory listing
  4. [4]inventory listing