Comparison ledger
KLA 1007, Seiko Epson NS 8080 SH, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1007KLA | NS 8080 SHSeiko Epson |
|---|---|---|
| OEM | KLA | Seiko Epson |
| Category | Test & Probe | Test & Probe |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA 1007 | Seiko Epson NS 8080 |
| Specifications | ||
| Manufacturer | KLA[1] | — |
| Model | 1007[1] | — |
| Description | Wafer Prober[1] | — |
| Wafer size | 150 mm[1] | — |
| Convertible to 8 inch wafer size | Yes[1] | — |
| Vintage | 01.06.1995[1] | — |
| Make | KLA[2] | — |
| Equipment type | Prober[2] | — |
| Configuration | — | High Speed[3] |
| Voltage | — | 200 Vac[4] |
| Category | — | Test & Probe[4] |
| Type | — | IC Handler[3] |
| Speed | — | High Speed[3] |
| Power Requirements | — | Single Phase, 200 Vac, 50/60 Hz[4] |
| Testing capability | — | 8-site (4 x 2)[5] |
| Testing area | — | 184 x 149 mm[5] |
| Max. Contact Force | — | 120 kgf[5] |
| Maximum Throughput | — | Ambient Temperature: 13,500 units per hour; High Temperature: 8,200 units per hour[5] |
| Frequency | — | 50/60 Hz[4] |
| Devices Handled | — | QFP, TSOP, CSP, WLCSP, BGA, QFN, PLCC, LGA, PGA[5] |
| Test Mode | — | 8-site (4 x 2) Square; 4-site (2 x 2) In-Line; 4-site (4 x 1); 2-site Single[5] |
| Heating Method | — | Heating Plate[5] |
| Temperature Accuracy | — | 50 - 90°C ±2°C; 90 - 155°C ±3°C[5] |
| Binning | — | Max. 6 bins (Auto 3, Manual 3)[5] |
| Tray | — | JEDEC (135.9 x 315.0 mm)[5] |
| Handler Dimensions | — | 1,500 x 1,860 x 2,000 mm[5] |
| Weight | — | 1,090kg[5] |
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