Comparison ledger
Karl Suss MA-4, OAI 808, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MA-4Karl Suss | 808OAI |
|---|---|---|
| OEM | Karl Suss | OAI |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Karl Suss MA-4 | OAI 808 |
| Specifications | ||
| OEM | Karl Suss[1] | — |
| Model | MA-4[1] | OAI 808 Aligner[2] |
| Equipment type | Mask Aligner[1] | — |
| Substrate size | Up to 4" (100mm) in diameter[1] | — |
| Sample compatibility | Works for smaller samples[1] | — |
| Alignment mode | Contact/proximity aligner[1] | — |
| Illumination wavelengths | 365 nm or 405 nm[1] | — |
| Backside alignment | Real-time infrared through-wafer backside alignment[1] | — |
| Type | — | semi-automated, four-camera, optical front- and backside mask aligner[2] |
| Motorized features | — | motorized backside focus, motorized auto leveling, auto gap setting[2] |
| Size | — | 2", 100mm, 150mm, 200mm pieces[2] |
| Mask size | — | 4"x4"; 5"x5", 7"x7", and 9"x9"[2] |
| Top side alignment accuracy | — | ± 1.0µm 3σ[2] |
| Bottom side alignment accuracy | — | ± 1.25µm 3σ[2] |
| Large gap alignment accuracy | — | Option / ± 1.5µm 3σ[2] |
| Resolution | — | Vacuum + Hard Contact ≤ 1 µm; Hard Contact ≤ 1.5 µm; Soft Contact ≤ 2.0 µm; Proximity ≥ 3.0 µm[2] |
| Exposure wavelength | — | 350 · ´50 nm[2] |
| Mercury arc lamp | — | 350 W[2] |
| Description | — | Semi-automated, four-camera, optical front- and backside mask aligner[3] |
| Alignment accuracy | — | Top side alignment: ± 1.0µm 3σ; bottom side alignment: ± 1.25µm 3σ; large gap alignment: option / ± 1.5µm 3σ[2] |
| Lamp | — | Mercury arc lamp, 350 W[2] |
| Supported substrate sizes | — | 5 mm to 200 mm[2] |
| Thickness | — | 0.1–10 mm[2] |
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