Comparison ledger
Heidelberg Instruments VPG200, OAI 808-Aligner-Tool-Procedu, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | VPG200Heidelberg Instruments | |
|---|---|---|
| OEM | Heidelberg Instruments | OAI |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 600 nm minimum resolution with thin photoresist (< 1 µm) | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | Linux workstation | — |
| Generation | — | — |
| Family | Heidelberg Instruments VPG200 | OAI 808-Aligner-Tool-Procedu |
| Cited variants | — | |
| Specifications | ||
| Exposure source | 355 nm wavelength, pulsed Q-switched DPSS laser[1] | — |
| Alignment cameras | 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only)[1] | — |
| Autofocus | Real time autofocus[1] | — |
| Stage system | Position control with interferometers, chuck with vacuum for various substrate sizes[1] | — |
| Supported substrates | Masks and reticules (4, 5, 6, 7 inch) and wafer (100 and 150 mm SEMI-standard) cassette station[1] | — |
| Write heads | 3 interchangeable optics: Write Head 4, 10, 20 mm focal length[1] | — |
| Critical dimension | 0.6, 0.9 and 2.0 μm[1] | — |
| Minimum feature size | 500 nm[1] | — |
| Pattern edge roughness | XY direction dependent; max 90, 140 and 250 nm[1] | — |
| Alignment accuracy | <300, 400, 800 nm[1] | 1 µm to 2 µm[2] |
| Maximum substrate size | 7" x 7" square or 200 mm diameter[1] | — |
| Maximum exposure area | 7" x 7" square[1] | — |
| Design file compatibility | cif, gdsii, dxf, gerber[1] | — |
| Writing time with handling | 5" x 5" square (110 x 110 mm): 7, 18, 65 min[1] | — |
| Batch processing | Up to 20 5" masks or 25 wafers[1] | — |
| Laser wavelength | 355 nm (pulsed Q-switched DPSS laser)[1] | — |
| Imaging method | Projection of two linear arrays of 1000 pixels combined with mechanical stage movement[1] | — |
| Resolution (minimum) | Approximately 600 nm with thin photoresist (< 1 µm) for 4 mm write head[1] | — |
| Critical dimension (4 mm write head) | 0.6 µm[1] | — |
| Critical dimension (10 mm write head) | 0.9 µm[1] | — |
| Critical dimension (20 mm write head) | 2.0 µm[1] | — |
| Pattern edge roughness (4 mm write head) | max 90 nm (XY direction dependent)[1] | — |
| Pattern edge roughness (10 mm write head) | max 140 nm (XY direction dependent)[1] | — |
| Pattern edge roughness (20 mm write head) | max 250 nm (XY direction dependent)[1] | — |
| Alignment accuracy (4 mm write head) | < 300 nm (top side alignment)[1] | — |
| Alignment accuracy (10 mm write head) | < 400 nm (top side alignment)[1] | — |
| Alignment accuracy (20 mm write head) | < 800 nm (top side alignment)[1] | — |
| Substrate handling | Cassette station for masks and reticles (4, 5, 6, 7 inch) and wafers (100 and 150 mm SEMI-standard)[1] | — |
| Optional write heads (focal length) | 4 mm, 10 mm, 20 mm[1] | — |
| CAD file formats | cif, gdsii, dxf, gerber[1] | — |
| Writing time (5 inch x 5 inch square, with handling) | 7 min (4 mm head), 18 min (10 mm head), 65 min (20 mm head)[1] | — |
| Image reconstruction | Projection of two linear arrays of 1000 pixels combined with mechanical movement of the stage[1] | — |
| Critical Dimension | 0.6, 0.9 and 2.0 μm for 4, 10, 20 mm write heads respectively[1] | — |
| Designs compatibility | cif, gdsii, dxf, gerber[1] | — |
| Interchangeable optics | Write Head 4, 10, 20 mm focal length[1] | — |
| Writing time with handling (5"x5" sq. 110x110 mm) | 7, 18, 65 min for 4, 10, 20 mm write heads[1] | — |
| Alignment | 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only); overlay exposure with top side alignment requires wafer flat pre-alignment with maximum tolerance of ±10 mrad[1] | — |
| Resolution | Minimum about 600 nm with thin photoresist thickness (<1 µm)[1] | Vacuum + Hard Contact ≤ 1 µm; Hard Contact ≤ 1.5 µm; Soft Contact ≤ 2.0 µm; Proximity ≥ 3.0 µm[2] |
| Type | Volume Pattern Generator (laser pattern generator)[1] | semi-automated, four-camera, optical front- and backside mask aligner[2] |
| Wafer cassette support | 100 and 150 mm SEMI-standard wafers[1] | — |
| Model | — | OAI Model 800 Mask Aligner[2] |
| Automation | — | Semi-automated[2] |
| Camera count | — | Four-camera[2] |
| Alignment type | — | Optical front- and backside mask aligner[2] |
| Backside focus | — | Motorized[2] |
| Auto leveling | — | Motorized[2] |
| Gap setting | — | Auto gap setting[2] |
| Supported piece size | — | 2", 100mm, 150mm, 200mm, pieces[2] |
| Thickness range | — | 0.1–10 mm[2] |
| Mask size | — | 4"x4"; 5"x5"; 7"x7"; 9"x9"[2] |
| Top side alignment | — | ± 1.0 µm 3σ[2] |
| Bottom side alignment | — | ± 1.25 µm 3σ[2] |
| Large gap alignment | — | Option / ± 1.5 µm 3σ[2] |
| Exposure wavelength | — | 350–450 nm[2] |
| Lamp | — | Mercury arc lamp, 350 W[2] |
| Motorized backside focus | — | yes[2] |
| Motorized auto leveling | — | yes[2] |
| Auto gap setting | — | yes[2] |
| Size | — | 2 in, 100 mm, 150 mm, 200 mm[2] |
| Thickness | — | 0.1-10 mm[2] |
| Mercury arc lamp | — | 350 W[2] |
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