Comparison ledger
GCA 200, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200GCA | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | GCA | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | up to 6-inch diameter wafers; substrate size approximately 10 x 10 mm up to 100 mm, with 150 mm possible | — |
| Process node | i-line | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | i-line | — |
| Family | GCA 200 | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Manufacturer | GCA[1] | — |
| Tool type | Lithography[1] | — |
| Description | GCA 200 I-Line Wafer Stepper[1] | — |
| Exposure wavelength | i-line (365 nm)[1] | — |
| Exposure mode | Step and repeat[1] | — |
| Wafer loading | Manual wafer loading[1] | — |
| Supported piece parts | Down to smaller than 10 mm x 10 mm[1] | — |
| Supported wafer diameter | Up to 6 inches[1] | — |
| Maximum square die size | 14.8 mm x 14.8 mm[1] | — |
| Lens | Olympus 2145[1] | — |
| Numerical aperture | 0.45[1] | — |
| Mask reduction | 5x[1] | — |
| Ultimate resolution | Better than 0.5 um in the center of the lens field[1] | — |
| Resolution across field | 0.7 um isolated lines across the entire field[1] | — |
| Alignment tolerance | Better than 0.25 um global alignment; better than 0.15 um local alignment[1] | — |
| I-line intensity | About 420 mW/cm² at the wafer with a 1000 W Hg arc lamp[1] | — |
| Control | Computer controlled; recipes can be programmed and saved on hard disk[1] | — |
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