Comparison ledger
Filmetrics F54, J.A. Woollam RC2, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | F54Filmetrics | RC2J.A. Woollam |
|---|---|---|
| OEM | Filmetrics | J.A. Woollam |
| Category | Precision Optics | Precision Optics |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Filmetrics F54 | J.A. Woollam RC2 |
| Specifications | ||
| instrument type | spectroscopic ellipsometer[1] | — |
| measurement | thicknesses and refractive indices of thin films[1] | — |
| substrate size | Up to 200 mm wafers[1] | — |
| light source | Xenon Arc lamp 75W[1] | — |
| wavelength range | 210 nm to 2500 nm[1] | — |
| spot size without focusing probes | 3 to 4 mm beam diameter[1] | — |
| spot size with focusing probes | 120 microns beam diameter[1] | — |
| stage | Motorized XY stage mapping[1] | — |
| z stage | Motorized Z and Autofocus[1] | — |
| tilt alignment | Automatic Tilt Alignement Routine[1] | — |
| Instrument type | — | Spectroscopic ellipsometer[1] |
| Measured quantities | — | Thicknesses and refractive indices of thin films[1] |
| Substrate size | — | Up to 200 mm wafers; chips with a surface larger than the cross section of the incident beam[1] |
| Light source | — | Xenon Arc lamp 75W[1] |
| Wavelength range | — | 210 nm to 2500 nm[1] |
| Spot size without focusing probes | — | 3 to 4 mm beam diameter[1] |
| Spot size with focusing probes | — | 120 microns beam diameter[1] |
| Stage | — | Motorized XY stage mapping[1] |
| Vertical motion | — | Motorized Z and autofocus[1] |
| Alignment | — | Automatic tilt alignment[1] |
| Software | — | CompleteEASE[1] |
| Equipment type | — | Spectroscopic ellipsometer[1] |
| Measurement capability | — | Measures thicknesses and refractive indices of thin films (transparent or not)[1] |
| Measureable material classes | — | Dielectric and semiconductor films (silicon dioxide, silicon nitride, polysilicon, amorphous silicon); metallic films; organic layers such as carbon and photosensitive resists[1] |
| Measurement principle | — | Measures the ratio of reflection coefficients Rp/Rs expressed as Ψ and Δ; refractive index (n) and thickness (t) are resolved by an algorithm from measured Ψ and Δ values[1] |
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