Waferpedia

Comparison ledger

2100 hS iversusEsec 2100 hS

Esec 2100 hS i, Esec Esec 2100 hS, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size4"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation3rd generation3rd generation
FamilyEsec 2100 hS iEsec Esec 2100 hS
Cited variants
  • Esec 2100 hS3rd generation[1]
  • Esec 2100 hS iXplus[1]
  • Esec 2100 sD advanced i[1]
  • Esec 2100 hS i[1]
  • Esec 2100 SC[1]
  • Esec 2100 SSI[1]
—
Specifications
TypeDie bonder[1]—
Generation3rd generation[1]—
Platform300 mm high speed platform[1]—
Bonding methodEpoxy[1]Epoxy[1]
Cycle time120 ms with Liquid Cooling option[1]120 ms (with Liquid Cooling option)[1]
Bonding accuracy20 µm @ 3σ (15 µm option)[1]20 µm @ 3σ (15 µm option)[1]
Wafer size4" to 12" (on 8" or 12" wafer frames)[1]4" to 12" (on 8" or 12" wafer frames)[1]
Die size0.25 mm (with Small Die Kit) to 20 mm[1]0.25 mm (with Small Die Kit) to 20 mm[1]
Leadframe sizeLength: 90 to 300 mm; Width: 23 to 100 mm[1]—
Machine dimensions1785 x 1448 x 1400 mm (W x D x H)[1]—
Leadframe size (Length)—90 to 300 mm[1]
Leadframe size (Width)—23 to 100 mm[1]
Machine dimensions (W x D x H)—1785 x 1448 x 1400 mm[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com