Comparison ledger
Canon FPA 3000 iW, EV Group 101, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | FPA 3000 iWCanon | 101EV Group |
|---|---|---|
| OEM | Canon | EV Group |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon FPA 3000 | EV Group 101 |
| Cited variants |
| — |
| Specifications | ||
| Voltage | 200V[2] | — |
| Configuration | 50/60 Hz[3] | — |
| Phase | 3 Phase[2] | — |
| Power | 29kVA[3] | — |
| Make | Canon[3] | — |
| Model | FPA 3000 iW[3] | 101[5] |
| Category | Lithography[2] | — |
| Equipment type | Stepter[3] | — |
| Frequency | 50/60 Hz[2] | — |
| Chamber | Rasco TBW-CD-83iW Compact Chamber[3] | — |
| Reticle size | 6" square t=0.25"[4] | — |
| Reticle material | Quartz[4] | — |
| Pattern material | 2 layer Cr, 3 layer Cr[4] | — |
| Pellicle frame | Pattern side only[4] | — |
| Wafer size | 4" thru 8" SEMI Standard, JEIDA, Notch / Flat[4] | — |
| Projection magnification | 1/2 X[4] | — |
| Numerical aperture | 0.24[4] | — |
| Field size | 50X50mm[4] | — |
| Exposure light | i-line (365nm)[4] | — |
| Light source | 2.0KW Super High Pressure Hg Lamp[4] | — |
| Intensity | 2500 W/m 2[4] | — |
| Uniformity | < 1.5%[4] | — |
| Resolution | <0.8µm[4] | — |
| Depth of focus | >4.0µm (0.8µm L&S)[4] | — |
| Image field deviation | <2.5µm[4] | — |
| Distortion | <±0.11µm[4] | — |
| Reticle rotation accuracy | <±0.02µm on wafer[4] | — |
| Reticle rotation repeatability | <0.05µm on wafer[4] | — |
| Wafer alignment | <0.10µm mean + 3sigma[4] | — |
| Focus repeatability | <0.10µm (3sigma)[4] | — |
| Leveling repeatability | <7ppm (3sigma)[4] | — |
| Minimum compensation range | >100ppm[4] | — |
| Step accuracy | <0.05µm (3sigma)[4] | — |
| Scaling | <±1.0ppm[4] | — |
| Orthogonality | <±1.0ppm[4] | — |
| Throughput | >120 wafers/hour Φ6", 50mm, 9 shots; >115 wafers/hour Φ8", 50mm, 14 shots[4] | — |
| Rasco chamber | TBW-CD-83iW Compact Chamber[3] | — |
| OEM | — | EV Group[5] |
| Equipment name | — | EVG 101 Spray Coater[5] |
| NEMO ID | — | evgspraycoat[5] |
| Training required | — | EVG 101 Training[5] |
| Training duration | — | 1.50 hours[5] |
| Processing technique | — | Resist Spray Coat (manual)[5] |
| Cleanliness | — | "All"[5] |
| Location | — | SNF Paul G Allen L107 Cleanroom[5] |
| Wafer diameter (substrate size) | — | up to 300 mm[6] |
| Available modules | — | Spin coat / OmniSpray® / develop[6] |
| Wafer handling options | — | Bowed / warped / thin wafer handling, edge handling[6] |
| Dispense options | — | Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[6] |
| Processing technique (at SNF) | — | Resist Spray Coat (manual)[7] |
| Cleanliness group (at SNF) | — | "All"[5] |
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