Waferpedia

Comparison ledger

0 V 500versusMini Tytan 4600

Blue M 0 V 500, Tystar Mini Tytan 4600, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0 V 500Blue M
OEMBlue MTystar
CategoryThermal / DiffusionThermal / Diffusion
Wafer size—50mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyBlue M 0 V 500Tystar Mini Tytan 4600
Specifications
Furnace stack tubes—Four vacuum tubes in one furnace stack[1]
Atmospheric pressure tubes—Two[1]
Low-pressure tubes—Two[1]
Maximum temperature for silicon nitride—Up to 850 °C[1]
Maximum temperature for all others—Up to 650 °C[1]
Maximum deposition thickness—5 µm[1]
Low temperature oxidation—For processes of < 450 °C[1]
Mass flow system—MFS-460[1]
Data collection system—DCS-30[1]
Wafer Size—up to 150 mm (6 inch)[1]
Maximum Temperature (Silicon Nitride)—850 °C[1]
Maximum Temperature (Other Processes)—650 °C[1]
Low Temperature Oxidation Temperature—< 450 °C[1]
Number of Tubes—4 (2 atmospheric, 2 low-pressure)[1]
LPCVD Processing Status—Currently not available[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]pnf.uchicago.edupnf.uchicago.edu